Design of a Dual-Band Wireless LAN SiGe-Bipolar Power Amplifier
نویسندگان
چکیده
This article describes an integrated dualband multi-mode wireless LAN radio frequency power amplifier (Infineon PMB 8825) for 2.45 GHz and 5.25 GHz. The device has been realized in a 42 GHz-fT, 0.35μm SiGe-Bipolar high volume technology. The chip features two single-ended 3-stage power amplifiers for each frequency band and a control section that includes band select, standby and power control functions. The 2.45 GHz section achieves an output P1dB of 28 dBm with a PAE of 40% and a saturated output power of 29 dBm. The 5.25 GHz section achieves an output P1dB of 23.8 dBm, and a saturated output power of 25.9 dBm at 3.3 V supply voltage. Its PAE at the P1dB is 24%. The small signal gain is 31 dB at 2.45 GHz and 26 dB at 5.25 GHz.
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